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1 of 11 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in vg pin 1 (cut ) rf out vd pin 2 gnd base rf3928b 380w gan wideband pulsed power amplifier the rf3928b is a 65v 380w high power discrete amplifier designed for s-band pulsed radar, air traffic control and su rveillance, and general purpose broadband amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single pack- age. the rf3928b is a matched gan transistor packaged in a hermetic, flanged ceramic package. this package provides ex cellent thermal stability through the use of advanced heat sink and power dissipati on technologies. ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. features ? wideband operation 2.8ghz to 3.4ghz ? advanced gan hemt technology ? advanced heat-sink technology ? supports multiple pulse conditions ? 10% to 20% duty cycle ? 100 ? s to 300 ? s pulse width ? integrated matching components for high terminal impedances ? 65v operation typical performance ? pulsed output power 380w ? small signal gain 13db ? drain efficiency 50% ? -40c to 85c operating temperature applications ? radar ? air traffic control and surveillance ? general purpose broadband amplifiers ds120503 ? package: hermetic 2-pin, flanged ceramic rf3928b 380w gan wideband pulsed power ampli- fier rf3928bs2 2-piece sample bag rf3928bsb 5-piece bag rf3928bsq 25-piece reel rf3928bsr 50 pieces on 7? short reel rf3928btr13 250 pieces on 13? reel rf3928b99pcba-410 fully assembled ev aluation board 2.8ghz to 3.4ghz; 65v operation
2 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain source voltage 150 v gate source voltage - 8 to +2 v gate current (i g ) 155 ma operational voltage 65 v ruggedness (vswr) 3:1 storage temperature range -55 to +125 c operating temperature range (t l ) -40 to +85 c operating junction temperature (t j ) 250 c human body model class 1a mttf (t j < 200c) mttf (t j < 250c) 3.0e + 06 1.4e + 05 hours thermal resistance, rth (junction to case) t c =85c, dc bias only t c =85c, 100 ? s pulse, 10% duty cycle t c =85c, 300 ? s pulse, 10% duty cycle 0.90 0.18 0.25 c/w * mttf ? median time to failure for wear-out failure mode (30% idss degradation) which is determined by the technology process reliability. refer to product qualification report for fit (random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values specified in the table on page two. bias conditions should also satisfy the following expression: p diss <(t j ?t c )/r th j-c and t c =t case parameter specification unit condition min. typ. max. recommended operating condition drain voltage (v dsq )65v gate voltage (v gsq ) - 8-3-2v drain bias current 440 ma frequency of operation 2800 3400 mhz dc functional test i g (off) ? gate leakage 2 ma v g =-8v, v d =0v i d (off) ? drain leakage 2 ma v g =-8v, v d =65v v gs (th) ? threshold voltage - 3.5 v v d =65v, i d =40ma v ds (on) ? drain voltage at high current 0.22 v v g =0v, i d =1.5a rf functional test [1, 2] small signal gain 13 db f=2900mhz, p in =30dbm power gain 11.2 11.8 db f = 2900 mhz, p in =44dbm input return loss - 6 db f=2900mhz, p in =30dbm output power 55.3 56 dbm f=2900mhz, p in =44dbm drain efficiency 45 50 % small signal gain 13 db f=3150mhz, p in =30dbm caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf functional test (continued) power gain 11.2 11.8 db f = 3150 mhz, p in =44dbm input return loss - 6 db f=3150mhz, p in =30dbm output power 55.5 56 dbm f=3150mhz, p in =44dbm drain efficiency 45 50 % small signal gain 13 db f=3400mhz, p in =30dbm power gain 11.3 11.8 db f = 3400 mhz, p in =44dbm input return loss - 6 db f=3400mhz, p in =30dbm output power 55.5 56 dbm f=3400mhz, p in =44dbm drain efficiency 45 50 % rf typical performance [1, 2] frequency range 2800 3400 mhz small signal gain 13 db f=3100mhz, p in =30dbm power gain 11.8 db p out =55.8dbm gain variation with temperature -0.015 db/c at peak output power output power (p sat ) 55.8 dbm peak output power 380 w peak output power drain efficiency 50 % at peak output power [1] test conditions: pulsed operation, pw=100 ? s, dc=10%, v ds =65v, i dq =440ma, t=25oc [2] performance in a standard tuned test fixture parameter specification unit condition min. typ. max.
4 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture over temperature (pulsed at center band frequency) 10 11 12 13 14 15 16 17 45 46 47 48 49 50 51 52 53 54 55 56 57 gain(db) outputpower(dbm) gainversusoutputpower(f=3200mhz) (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) gain85c gain25c gain40c 10 20 30 40 50 60 70 45 46 47 48 49 50 51 52 53 54 55 56 57 drainefficiency(%) outputpower(dbm) efficiencyversusoutp utpower(f=3200mhz) (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) eff85c eff25c eff40c 12 11 10 9 8 7 6 45 46 47 48 49 50 51 52 53 54 55 56 57 irl,inputreturnloss(db) outputpower(dbm) inputreturnlossversusou tputpower(f=3200mhz) (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) irl85c irl25c irl40c
5 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixe d-tuned test fixture (t=25c, unless noted) 14 12 10 8 6 4 2 0 8 9 10 11 12 13 14 15 2800 2900 3000 3100 3200 3300 3400 3500 inputreturnloss(db) gain(db) frequency(mhz) smallsignalperformanceversusfrequency,p in =30dbm (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) gain irl fixedtuned testcircuit 12 8 4 0 10 11 12 13 2800 2900 3000 3100 3200 3300 3400 3500 3600 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p in =44dbm (pulsed10%dutycylce,100s,v d =65v,i dq =440ma) gain irl fixedtuned testcircuit 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2800 2900 3000 3100 3200 3300 3400 3500 3600 drainefficiency(%) frequency(mhz) drainefficiencyversusfrequency,p in =44dbm (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) eff fixedtuned testcircuit 10 20 30 40 50 60 70 9 10 11 12 13 14 15 45 46 47 48 49 50 51 52 53 54 55 56 drainefficiency(%) gain(db) outputpower(dbm) gain/efficiencyversusp out ,f=3200mhz (pulsed10%dutycycle,100s,v d =65v,i dq =440ma) gain draineff
6 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed- tuned test fixture (t=25c, unless noted) 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 powerdissipation(w) maximumcasetemperature( c) pulsepowerdissipationderatingcurve (basedonmaximumpackagetemperatureandrth) 300spulsewidth,10%dutycycle 100spulsewidth,10%dutycycle 20 25 30 35 40 45 50 55 60 240 260 280 300 320 340 360 380 400 10 100 1000 drainefficiency(%) p out (w) pulsewidth(sec) pout/deversuspulsewidth,f=3200mhz (pulsed10%dutycycle,v d =65v,i dq =440ma) outputpower drainefficiency 35 40 45 50 55 60 65 250 275 300 325 350 375 400 0 5 10 15 20 drainefficiency(%) p out (w) dutycycle(%) pout/deversusdutycycle,f=3200mhz (pulsed,100spulse,v d =65v,i dq =440ma) pout eff
7 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm) pin function description 1gate v g rf input 2drain v d rf output 3source ground base pin function description
8 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rf3928b evaluation board esd sensitive material. please use proper esd precautions when handling device s of evaluation board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -6v to vg. 4. apply 65v to vd. 5. increase v g until drain current reaches 440ma or desired bias point. 6. turn on the rf input. important note: depletion mode device, when biasing the device v g must be applied before v d . when removing bias v d must be removed before v g is removed. failure to follow sequencing will cause the device to fail. note: for optimal rf performance, consistent and optimal heat removal from the base of the package is required. a thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. it is recom- mended a small amount of thermal grease is applied to the un derside of the device package. even application and removal of excess thermal grease can be achieved by spreading the ther mal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board. rfin rfout vg vd rf3928b 2.8ghz to 3.4ghz
9 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials component value manufacturer part number r1 10 ? panasonic erj-8geyj100v r2 0 ? panasonic erj-3gey0r00 r3 51 ? panasonic erj-8geyj510 c1,c11 22pf atc atc100a220jt c2, c14 15pf atc atc100a150jt c5, c16 1000pf novacap 0805g102m101nt c6, c15 10000pf tdk c2012x7r2a103m c7 120 ? panasonic erj-6geyj120v c8, c18 10 ? fpanasonic eeu-fc2a100 c9 0.7pf atc ATC100A0R7BT c10 0.2pf atc atc100a0r2bt c17 62pf atc atc100b620jt l1 22nh coilcraft 0807sq-22n_lc l20, l21 115 ? , 10a steward 28f0181-1sr-10 l22, l23 75 ? , 10a steward 35f0121-1sr-10 c19 330 ? f illinois capacitor 9337cke100m c3, c4, c7, c12, c13 not populated rf3928b c9 c2 c3 v gate c1 50 ? ? strip 50 ? ? strip j2 rf out l1 c4 c6 r2 c8 + c12 c13 c14 c15 c16 c19 r3 c17 l22 l23 j1 rf in l21 l20 c18 + v drain c11 c7 r1 c5 c10
10 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) z source ( ? ) z load ( ? ) 2800 60.4 ? j0.5 42.1 ? j30.5 3000 51.9 ? j13.5 33.8 ? j25.7 3200 44.1 ? j16.5 29.5 ? j8.9 3400 38.3 ? j16.7 17.0 ? j9.0 note: device impedances reported are the measured evaluation board impedances chosen for a trade off of peak power, peak effici ency and gain performance across the entire frequency bandwidth.
11 of 11 rf3928b ds120503 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions gan hemt devices are esd sensitive ma terials. please use proper esd pr ecautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all th ree terminals of the device. the phys ical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages ar e varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to the drain. during the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal ca pacitance measurements. the ca pacitance values presented in the typical characteristics table of th e device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletio n mode high electron mobility tr ansistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transi stor. the gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determin ed by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for bias ing this device based on performance trade off. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy capturin g the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. knowing the dissipated power at the time of th e measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat remo val must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including he atsinking systems and air flow mecha- nisms. incorporating the dissipa ted dc power, it is possible to calculate the junction temperature of the device.

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